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M54V24616 - MSM54V24616

Description

The MSM54V24616 is a 131,072-word 16-bit

2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Features

  • 131,072-words.
  • 16-bit.
  • 2 banks configuration.
  • Single 3.3 V± 10% power supply.
  • LVTTL compatible inputs and outputs www. DataSheet4U. com.
  • All input signals are latched at rising edge of system clock.
  • Auto precharge and controlled precharge.
  • Internal pipelined operation: column address can be changed every clock cycle.
  • Dual internal banks controlled by A9 (Bank Address: BA).
  • Independent byte operation via DQML and DQM.

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Datasheet preview – M54V24616

Datasheet Details

Part number M54V24616
Manufacturer OKI Electric
File Size 460.11 KB
Description MSM54V24616
Datasheet download datasheet M54V24616 Datasheet
Additional preview pages of the M54V24616 datasheet.

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Full PDF Text Transcription

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in im el Pr ¡ Semiconductor MSM54V24616 ¡ Semiconductor 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM MSM54V24616 y ar DESCRIPTION The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous interface. FEATURES • 131,072-words ¥ 16-bit ¥ 2 banks configuration • Single 3.3 V± 10% power supply • LVTTL compatible inputs and outputs www.DataSheet4U.
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