M54V24616
Description
The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology.
Key Features
- Single 3.3 V± 10% power supply
- All input signals are latched at rising edge of system clock
- Auto precharge and controlled precharge
- Internal pipelined operation: column address can be changed every clock cycle
- Dual internal banks controlled by A9 (Bank Address: BA)
- Independent byte operation via DQML and DQMU
- Programmable burst sequence (Sequential / Interleave)
- Programmable burst length (1, 2, 4, 8 and full page)
- Programmable CAS latency (1, 2 and 3)
- Programmable Write burst (Burst write / Single write)
