20N50
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
V DSS
RDS(ON )
500V 0.26Ω 20A
TO-3P
Features
- 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
- Low gate charge (typical 70Nc)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
TO-3P
0GFD
.goford.cn TEL：0755-86350980 FAX：0755-86350963
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
Parameter
Units
VDSS ID IDM
VGS EAS dv/dt TJ and TSTG
Drain-to-Source Voltage Continuous Drain Current Pulsed...
