20N50 mosfets equivalent, n-channel mosfets.
* 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
* Low gate charge (typical 70Nc)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Ordering In.
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no.
Image gallery
TAGS
Download (Size : 1.08MB)