OSP12N60C mosfet equivalent, 600v n-channel mosfet.
* 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V
* Low gate charge ( typical 52nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improve.
This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu.
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