OSP12N60C
Description
This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V
- Low gate charge ( typical 52nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability {D GDS TO-220 GD S TO-220F
- ◀▲ {G *
