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OSP12N60C - 600V N-Channel MOSFET

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OSP12N60C 600V N-Channel MOSFET by OCENME - Datasheet Preview — Datasheet preview – OSP12N60C

Datasheet Details

Part number	OSP12N60C
Manufacturer	OCENME
File Size	286.30 KB
Description	600V N-Channel MOSFET
Datasheet	OSP12N60C Datasheet
Additional preview pages of the OSP12N60C datasheet.

Product details

Description

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology.

Features

12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-So.

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Published: Nov 21, 2015 |