NAND128-A
Overview
- High density NAND flash memories - Up to 256-Mbit memory array - Up to 32-Mbit spare area - Cost effective solutions for mass storage applications
- NAND interface - x8 or x16 bus width - Multiplexed address/ data - Pinout compatibility for all densities
- Supply voltage - VDD = 2.7 to3.6 V
- Page size - x8 device: (512 + 16 spare) bytes - x16 device: (256 + 8 spare) words
- Block size - x8 device: (16 K + 512 spare) bytes - x16 device: (8 K + 256 spare) words
- Page read/program - Random access: 12 µs (3V)/15 us (1.8V) (max) - Sequential access: 50 ns (min) - Page program time: 200 µs (typ)
- Copy back program mode - Fast page copy without external buffering
- Fast block erase - Block erase time: 2 ms (typical)
- Status register
- Electronic signature
