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M29DW128G - Flash memory

Description

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9 Revision history

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Features

  • Supply voltage www. DataSheet4U. com.
  • VCC = 2.7 to 3.6 V for Program, Erase and Read.
  • VPP =12 V for Fast Program (optional).
  • Asynchronous Random/Page Read.
  • Page width: 8 words.
  • Page access: 25 ns.
  • Random access: 60 ns Programming time.
  • 15 µs per byte/word (typical).
  • 32-word write buffer Erase verify Memory blocks.
  • Quadruple bank memory array: 16 Mbit+48 Mbit+48 Mbit+16 Mbit.
  • Parameter blocks (at top and.

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Datasheet Details

Part number M29DW128G
Manufacturer Numonyx
File Size 292.19 KB
Description Flash memory
Datasheet download datasheet M29DW128G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29DW128G 128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory Data Brief Features ■ Supply voltage www.DataSheet4U.com – VCC = 2.7 to 3.
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