JS28F00AM29EWHx Datasheet Text
Numonyx™ Axcell™ M29EW Datasheet
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory
Features
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Supply voltage
- VCC = 2.7 to 3.6 V for Program, Erase and Read
- VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read
- Page size: 16 words or 32 bytes
- Page access: 25 ns
- Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program
- 512-word program buffer Programming time
- 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization
- Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller
- Embedded byte/word program algorithms Program/ Erase Suspend and Resume
- Read from any block during Program Suspend
- Read and Program another block during Erase Suspend Blank Check to verify an erased block
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Unlock Bypass/Block Erase/Chip Erase/Write to Buffer
- Faster Buffered/Batch Programming
- Faster Block and Chip Erase Vpp/WP# pin protection
- Protects first or last block regardless of block protection settings Software protection
- Volatile Protection
- Non-Volatile Protection...
