JS28F00AM29EWHx Datasheet | Numonyx

Features - - - - - - - - Supply voltage - VCC = 2.7 to 3.6 V for Program, Erase and Read - VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read - Page size: 16 words or 32 bytes - Page access: 25 ns - Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program - 512-word program buffer Programming time - 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization - Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller - Embedded byte/word program algorithms Program/ Erase Suspend and Resume - Read from any block during Program Suspend - Read and Program another block during Erase Suspend Blank Check to verify an erased block - - - - http://..net/ - - - - - - Unlock Bypass/Block Erase/Chip Erase/Write to Buffer - Faster Buffered/Batch Programming - Faster Block and Chip Erase Vpp/WP# pin protection - Protects first or last block regardless of block protection settings Software protection - Volatile Protection - Non-Volatile Protection - Password Protection - Password Access Extended Memory block - 128-word/256-byte block for permanent, secure identification. - can be programmed and locked by factory or by the customer Low power consumption - Standby Minimum 100,000 Program/Erase cycles per block ETOXTM- X (65nm) MLC technology Fortified BGA and TSOP packages JESD47E pliant Green packages available - Ro HS pliant - Halogen Free April 2011 208045-11 1 datasheet pdf - http://..net/ Table of...