P2003EVG Datasheet | Niko

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE .. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL VDS VGS TC = 25 °C TC = 70 °C ID IDM TC = 25 °C TC = 70 °C PD Tj, Tstg LIMITS -30 ±20 -9 -8 -50 2.5 1.3 -55 to 150 °C UNITS °C / W °C / W W A UNITS V V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RθJc RθJA TYPICAL MAXIMUM 25 50 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -7A VGS = -10V, ID = -9A VDS = -10V, ID = -9A -50 25 15 24 35 20 -30 -1 -1.5 -3 ±100 n A -1 -10 µA A m S V LIMITS UNIT MIN TYP MAX OCT-20-2004 1 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor SOP-8 Lead-Free DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge .. Ciss Coss Crss Qg Qgs Qgd td(on) tr 1610 VGS = 0V, VDS = -15V, f = 1MHz 410 200 17 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -9A 5 6 5.7 VDS = -15V, RL = 1 ID ≅ -1A, VGS = -10V, RGS = 6 10 18 5 n S 24 n C p F Gate-Source Charge2 Gate-Drain Charge 2 2 Turn-On Delay Time2 Rise Time Turn-Off Delay Time Fall Time2 td(off) tf SOURCE-DRAIN DIODE RATINGS AND...