• Part: P2003BVG
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Niko
  • Size: 283.21 KB
Download P2003BVG Datasheet PDF
Niko
P2003BVG
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 20m ID 8A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL G : GATE D : DRAIN S : SOURCE LIMITS 30 ±20 8 6 32 2.5 1.6 -55 to 150 275 UNITS V V W °C MAXIMUM 50 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise...