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Niko

P2003BVG Datasheet Preview

P2003BVG Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2003BVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 20m
ID
8A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
G : GATE
D : DRAIN
S : SOURCE
LIMITS
30
±20
8
6
32
2.5
1.6
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
30
1 1.5 2.5
V
±100 nA
1
µA
10
8A
1 JUL-25-2005




Niko

P2003BVG Datasheet Preview

P2003BVG Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2003BVG
SOP-8
Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 15V, ID = 8A
DYNAMIC
26 32
17 20 m
16 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 4.5V,
ID = 2A
VDD = 15V
ID 1A, VGEN = 10V, RG = 0.2
1200
220
100
15 20
5.8
3.8
11 18
17 26
37 54
20 30
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = 1A, VGS = 0V
2.3
A
4.6
1.1 V
Reverse Recovery Time
trr IF = 2.3A, dlF/dt = 100A / µS
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
50 80 nS
REMARK: THE PRODUCT MARKED WITH “P2003BVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 JUL-25-2005


Part Number P2003BVG
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Niko
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P2003BVG Datasheet PDF






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