PD1503YVS Datasheet | Niko-Sem

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8mΩ 21mΩ ID 9A 8A 1 2 3 4 Q2 Q1 8 7 6 5 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range L = 0.1m H TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C SYMBOL VDS VGS ID IDM IAS EAS PD Tj, Tstg Q2 30 ±20 9 7 35 29 43 2 1.28 -55 to 150 °C Q1 30 ±20 8 6 30 21 23 m J W A UNITS V V ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Reverse Current Forward Voltage THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL IR VF TYPICAL Schottky 0.05 0.45 MAXIMUM 62.5 UNITS m A V UNITS °C / W VR = 25V IF = 1A SYMBOL RJA Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T A = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 Q1 Q2 Q1 30 30 1 1 1.7 2 3 3 Oct-28-2009 1 Free Datasheet http://../ UNIT TYP MAX Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A REV 0.9 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 35 30 14.2 10.5 25.6 15.8 25 15 ±100 ±100 1 -1 10 -10 n A VDS = 24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 125 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VGS = 4.5V, ID = 7A Drain-Source On-State Resistance A A 20 15.8 32 21 S mΩ VGS = 10V, ID = 9A RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A Q1 Q2 Q1 Forward Transconductance1...