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P9006EDG Datasheet Preview

P9006EDG Datasheet

P-Channel Logic Level Enhancement

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NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90m
ID
-8A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±20
-7
-6
-30
28
18
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-60
V
-1 -2 -3
IGSS VDS = 0V, VGS = ±20V
±250 nA
VDS = -48V, VGS = 0V
IDSS
VDS = -44V, VGS = 0V, TJ = 125 °C
1
µA
10
ID(ON)
VDS = -5V, VGS = -10V
-32
A
OCT-21-2004
1
Free Datasheet http://www.datasheet4u.com/




Niko-Sem

P9006EDG Datasheet Preview

P9006EDG Datasheet

P-Channel Logic Level Enhancement

No Preview Available !

NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252
Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -7A
VDS = -10V, ID = -7A
100 135
m
70 90
9S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -30V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -7A
VDS = -20V
ID -1A, VGS = -10V, RGS = 6
760
90
40
15
2.5
3.0
7 14
10 20
19 34
12 22
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = IS, VGS = 0V
-1.3
-2.6
-1
Reverse Recovery Time
trr IF = -7 A, dlF/dt = 100A / µS
15.5
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7.9
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P9006EDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
OCT-21-2004
2
Free Datasheet http://www.datasheet4u.com/


Part Number P9006EDG
Description P-Channel Logic Level Enhancement
Maker Niko-Sem
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P9006EDG Datasheet PDF






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