• Part: P45N02LD
  • Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Niko-Sem
  • Size: 61.54 KB
Download P45N02LD Datasheet PDF
Niko-Sem
P45N02LD
P45N02LD is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Niko-Sem.
- Part of the P45N02LD_Niko comparator family.
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 (DPAK) PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20mΩ ID 45A 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 45 28 140 20 140 5.6 55 33 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR L = 0.1m H L = 0.05m H TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL m J Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 70 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 25 0.8 1.2 2.5 ±250 25 250 45 V n A µA A MAY-24-2001 Free Datasheet http://../ NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor VGS = 7V, ID = 18A VGS = 10V, ID = 20A VDS = 15V, ID =...