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Niko-Sem

P1504EDG Datasheet Preview

P1504EDG Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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NIKO-SEM
P-Channel Enhancement Mode
P1504EDG
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ
ID
-45A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1mH
Tc = 25 °C
Tc = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-45
-36
-150
-45
102
50
32
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
2VDD = -20V . Starting TJ = 25˚C.
TYPICAL
MAXIMUM
75
2.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 55 °C
LIMITS
UNIT
MIN TYP MAX
-40
-1.7 -2.2
-3
V
±100 nA
1
µA
10
REV1.6
Dec-02-2010
1




Niko-Sem

P1504EDG Datasheet Preview

P1504EDG Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

NIKO-SEM
P-Channel Enhancement Mode
P1504EDG
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
On-State Drain Current1
RDS(ON)
gfs
ID(ON)
VGS = -4.5V, ID = -15A
VGS = -10V, ID = -25A
VDS = -5V, ID = -25A
VDS = -5V, VGS = -10V,
19
13
24
-150
29
15 mΩ
S
A
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -15V, f = 1MHz
2700 2950
400 430
Reverse Transfer Capacitance
Crss
230 250
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = -15mV, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID =-25A
VDS = -20V , RL = 0.75Ω
ID 1A, VGS = -10V, RGEN =6Ω
3.5 4.5
40 45
10 13
58
11
75
89
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = IS, VGS = 0V
-25
-0.7 -1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -25A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
28
26
pF
Ω
nC
nS
A
V
nS
nC
REV1.6
Dec-02-2010
2


Part Number P1504EDG
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Niko-Sem
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P1504EDG Datasheet PDF






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