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Nihon Inter Electronics Corporation

PDMB600B12 Datasheet Preview

PDMB600B12 Datasheet

IGBT MODULE

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IGBT ModuleDual
□ 回 路 図 : CIRCUIT
00 A,1200V
QS043-402-20334 (2/4)
PDMB600B12
□ 外 形 寸 法 図 : OUTLINE DRAWING
140
130
110
36 43.8
10
13.8 11.5
4 - Ø6.5
(C2E1)
1
(E2)
2
7(G2)
6(E2)
(C1)
3
5(E1)
4(G1)
3-M8
12
7
6
3
5
4
4-M4
LABEL
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
tor
M4
M8
Rated Value
1,200
±20
600
1,200
2,800
-40~+150
-40~+125
2,500
3(30.6)
1.4(14.3)
10.5(107)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 1200V,VGE= 0V
12
mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
1.0
μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 600A,VGE= 15V
- 1.9 2.4 V
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 600mA
4-8V
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 50,000 -
pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 600V
L= 1Ω
G= 1Ω
GE= ±15V
- 0.25 0.45
0.40 0.70
μs
- 0.25 0.35
- 0.80 1.10
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
600
1,200
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol
rr
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol
Rth(j-c)
Test Condition
= 600A,VGE= 0V
= 600A,VGE= -10V
di/dt= 1200A/μs
Test Condition
Junction to Case
Min.
Typ.
1.9
Max. Unit
2.4
- 0.25 0.35 μs
Min.
Typ. Max. Unit
- 0.044 ℃/W
- 0.085
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日本インター株式会社




Nihon Inter Electronics Corporation

PDMB600B12 Datasheet Preview

PDMB600B12 Datasheet

IGBT MODULE

No Preview Available !

PDMB600B12
QS043-402-20334 (3/4)
Fig.1- Output Characteristics (Typical)
1200
VGE=20V
12V
TC=25℃
10V
1000 15V
800
9V
600
400
200
00
16
14
12
10
8
6
4
2
0
0
8V
2468
Collector to Emitter Voltage VCE (V)
7V
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
IC= 3 0 0 A
1200A
600A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
200000
100000
50000
Cies
VGE=0V
f=1MHZ
TC=25℃
20000
10000
5000
Coes
2000
Cres
1000
500
200
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25℃
IC= 3 0 0 A
1200A
14
600A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
RL=1Ω
TC=25℃
700
16
14
600 12
500 10
400 8
VCE=600V
300 6
400V
200 4
200V
100 2
00
0 800 1600 2400 3200 4000 4800
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.6
1.4
1.2
tOFF
1
VCC=600V
RG=0.82Ω
VGE=±15V
TC=25℃
0.8
0.6 tf
0.4
0.2 tON
tr
0 0 100 200 300 400 500 600
Collector Current IC (A)
www.DataSheet.in
日本インター株式会社


Part Number PDMB600B12
Description IGBT MODULE
Maker Nihon Inter Electronics Corporation
Total Page 3 Pages
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