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Nihon Inter Electronics

ptmb50e6 Datasheet Preview

ptmb50e6 Datasheet

IGBT

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IGBT Module- Six Pack
50 A,600V
QS043-402-(2/5)
PTMB50E6
PTMB50E6C
□ 回 路 図 : CIRCUIT
G1
E1
U
G2
E2
PTMB50E6
13
1
2
16
3
17 4
PTMB50E6C
G3
E3
V
G4
E4
5
6
15
7
8
G5
E5
W
G6
E6
9
10
14
11
12
□ 外 形 寸 法 図 : OUTLINE DRAWING
5-fasten tab
#250
94
83
2-Ø 5.5
G1E1 G3E3 G5E5
UV
W
93. 00
4× 15.24= 60.96
16.02 15.24 12.62
CL
17
13
4-Ø 6.00
2-Ø 5.50
12-fasten tab
#110
G2 E2 G4E4 G6E6
15.5 18 18 15.75
5 13 5 13 5
2.50
1 12
3.81
8.00
11. 43
5× 11.43= 57.15
70. 40
107. 00
4-Ø 2.10
1.15× 1.00
LABEL
PTMB50E6
LABEL
104.20
PTMB50E6C
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締め付けトルク
Mounting Torque
Module Base to Heatsink
tor
Rated Value
600
±20
50
100
250
-40~+150
-40~+125
2,500
2(20.4)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 600V, VGE= 0V
- - 1.0 mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 50A,VGE= 15V
- 2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 50mA
4.0
- 8.0
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 2,500 - pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 300V
= 6.0Ω
= 20Ω
GE= ±15V
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
50
100
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 50A,VGE= 0V
= 50A,VGE= -10V
di/dt= 100A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c) Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.50
1.10
Unit
℃/W
00




Nihon Inter Electronics

ptmb50e6 Datasheet Preview

ptmb50e6 Datasheet

IGBT

No Preview Available !

PTMB50E6
PTMB50E6C
QS043-402-(3/5)
100
90
80
70
60
50
40
30
20
10
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=25A
100A
50A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
100
90
80
70
60
50
40
30
20
10
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=25A
50A
100A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=6.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 50 100 150 200
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
10000
3000
Cies
VGE=0V
f=1MHZ
TC=25°C
1000
300
Coes
Cres
100
30
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00


Part Number ptmb50e6
Description IGBT
Maker Nihon Inter Electronics
Total Page 4 Pages
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