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Nihon Inter Electronics

prfmb100e6 Datasheet Preview

prfmb100e6 Datasheet

IGBT

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IGBT Module-Chopper
100A,600V
PRFMB100E6
□ 回 路 図 : CIRCUIT
□ 外 形 寸 法 図 : OUTLINE DRAWING
(C2E1)
1
(E2)
2
7(G2)
6(E2)
(C1)
3
94
80 ± 0 .2 5
12 11 12 11 12
12 3
2-Ø 5.5
7
6
3-M5
23 23 17
16 7 16 7 16
4-fasten tab
#110 t= 0.5
LABEL
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
tor
Rated Value
600
±20
100
200
400
-40~+150
-40~+125
2,500
2(20.4)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 600V,VGE= 0V
- - 1.0 mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 100A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 100mA
4.0
8.0
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 5,000 - pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 300V
= 3.0Ω
= 8.2Ω
GE= ±15V
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
100
200
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 100A,VGE= 0V
= 100A,VGE= -10V
di/dt= 200A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.31
0.65
Unit
℃/W
00




Nihon Inter Electronics

prfmb100e6 Datasheet Preview

prfmb100e6 Datasheet

IGBT

No Preview Available !

PRFMB100E6
200
180
160
140
120
100
80
60
40
20
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
1234
Collector to Emitter Voltage VCE (V)
9V
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=50A
200A
100A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=3.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 100 200 300 400
Total Gate Charge Qg (nC)
200
180
160
140
120
100
80
60
40
20
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=50A
100A
200A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
30000
10000
VGE=0V
f=1MHZ
TC=25°C
Cies
3000
Coes
1000
Cres
300
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00


Part Number prfmb100e6
Description IGBT
Maker Nihon Inter Electronics
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prfmb100e6 Datasheet PDF






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