TCQ30B04 Datasheet | Nihon Inter Electronics

FEATURES - High VRM SBD - Low Forward Voltage Drop and Low Noise - Fully Molded Isolation - Dual Diodes Cathode mon Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 150 30 Approx Net Weight:1.4g TCQ30B04 40 50 Hz,Full Sine Wave Tc=100°C Resistive Load 33.3 50 Hz Full Sine Wave,1cycle Non-repetitive - 40 to + 150 - 40 to + 150 Unit V A A A °C °C Electrical - Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj=25°C,VRM=VRRM per Diode Tj=25°C, IFM=15A per Diode Min. Typ. Max. Unit 10 0.61 1.5 m A V °C/W Rth(j-c) Junction to Case .. C_T_ OUTLINE DRAWING (Dimensions in mm) .. FORWARD CURRENT VS. VOLTAGE TCQ30B04 (per Arm) INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25°C Tj=150°C 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 180° θ CONDUCTION ANGLE 0° AVERAGE FORWARD POWER DISSIPATION TCQ30B04 (Total) RECT 180° SINE WAVE AVERAGE FORWARD POWER DISSIPATION...