PRHMB75E6 datasheet by Nihon Inter Electronics.
| Part number | PRHMB75E6 |
|---|---|
| Datasheet | PRHMB75E6_NihonInterElectronics.pdf |
| File Size | 303.75 KB |
| Manufacturer | Nihon Inter Electronics |
| Description | IGBT MODULE |
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－ － ２.１ － 3,200 ０.１５ ０.２５ ０.１０ ０.３５ Ｍａｘ. ２.４ ０.２５ Ｕｎｉｔ Ａ ＤＣ １ｍｓ Ｔｅｓｔ Ｃｏｎｄｉｔｉｏｎ ＩＦ= 75A,ＶＧＥ= 0V ＩＦ= 75A,ＶＧＥ= -10V ｄi/ｄt= 150A/μs Ｕｎｉｔ Ｖ μｓ □ 熱 的 特 性 ： ＴＨＥＲＭＡＬ ＣＨＡＲＡＣＴＥＲＩＳＴＩＣＳ Ｃｈａｒａｃｔｅｒｉｓｔｉｃ 熱 抵 抗 ＩＧＢＴ Ｔhermal Ｉmpedance Ｄiode Ｓｙｍｂｏｌ Ｒth(j-c) Ｔｅｓｔ Ｃｏｎｄｉｔｉｏｎ Junction to Case （Tc測定点チップ直下） Ｍｉｎ. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs.
View all Nihon Inter Electronics datasheets
| Part Number | Description |
|---|---|
| PRHMB75A6 | IGBT MODULE |
| PRHMB75B12 | IGBT MODULE |
| PRHMB75B12A | IGBT MODULE |
| PRHMB100A6 | IGBT MODULE |
| PRHMB100B12 | IGBT MODULE |
| PRHMB100B12A | IGBT MODULE |
| PRHMB100E6 | IGBT MODULE |
| PRHMB150A6 | IGBT MODULE |
| PRHMB150A6A | IGBT MODULE |
| PRHMB150B12 | IGBT MODULE |
