PRHMB600E6 Overview
- - 2.1 - 30,000 0.15 0.30 0.10 0.40 Max. 2.4 0.25 Unit A DC 1ms Unit V μs □ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tc測定点チップ直下) Min. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs.