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Nihon Inter Electronics

PRHMB200B12A Datasheet Preview

PRHMB200B12A Datasheet

IGBT MODULE

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IGBT MODULE Chopper 200A 1200V
CIRCUIT
PRHMB200B12A
OUTLINE DRAWING
2- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PRHMB200B12A
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
1200
+/ - 20
200
400
960
-40 to +150
-40 to +125
2500
3
2
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
ICES VCE=1200V,VGE=0V
-
Gate-Emitter Leakage Current
IGES VGE=+/- 20V,VCE=0V
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=200A,VGE=15V
-
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=200mA
4.0
Input Capacitance
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 600V
ton RL= 3 ohm
tf RG= 2 ohm
toff VGE= +/- 15V
-
-
-
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
200
400
Approximate Weight : 320g
Unit
V
V
A
W
°C
°C
V
Nm
Typ.
-
-
1.9
-
16600
0.25
0.40
0.25
0.80
Max.
4.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=200A,VGE=0V
IF=200A,VGE=-10V,di/dt=400A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.2 0.3 µs
Min. Typ. Max. Unit
-
-
-
-
0.125
0.24
°C/W
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Nihon Inter Electronics

PRHMB200B12A Datasheet Preview

PRHMB200B12A Datasheet

IGBT MODULE

No Preview Available !

www.DataSheet.co.kr
PRHMB200B12A
Fig.1- Output Characteristics (Typical)
400
VGE = 2 0 V
12V
TC=25
10V
15V
300
9V
200
100
0
0
16
14
12
10
8
6
4
2
00
8V
7V
2468
Collector to Emitter Voltage VCE (V)
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125
IC= 1 0 0 A
400A
200A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
20000
VGE = 0 V
f=1MHZ
TC= 2 5
Cies
10000
5000
2000 Coes
1000
500
Cres
200
100 0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25
IC=100A
400A
14
200A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
RL=3Ω
TC=25
700
16
14
600 12
500 10
400 8
VCE=600V
300 6
400V
200 4
200V
100 2
00
0 300 600 900 1200 1500
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 tOFF
VCC=600V
RG= 2.0 Ω
VGE=±15V
TC=25
0.8
0.6 tf
0.4
0.2 tON
0 tr
0
50 100 150
Collector Current IC (A)
200
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Part Number PRHMB200B12A
Description IGBT MODULE
Maker Nihon Inter Electronics
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PRHMB200B12A Datasheet PDF






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