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Nihon Inter Electronics

PRHMB200B12 Datasheet Preview

PRHMB200B12 Datasheet

IGBT MODULE

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IGBT Module-Chopper
200 A,1200V
PRHMB200B12
□ 回 路 図 : CIRCUIT
(C2E1)
1
(E2)
2
7(G2)
6(E2)
(C1)
3
□ 外 形 寸 法 図 : OUTLINE DRAWING
94.0
80 ±0.25
12.0 11.0 12.0 11.0 12.0
123
2-Ø6.5
7
6
3-M5
23.0
23.0 17.0
14 9 14 9 14
4-fasten tab
#110 t=0.5
LABEL
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
tor
Rated Value
1,200
±20
200
400
960
-40~+150
-40~+125
2,500
3(30.6)
2(20.4)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 1200V,VGE= 0V
4.0
mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
1.0
μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 200A,VGE= 15V
- 1.9 2.4 V
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 200mA
4.0 - 8.0 V
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 16,600 -
pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 600V
L= 3Ω
G= 2Ω
GE= ±15V
- 0.25 0.45
0.40 0.70
μs
- 0.25 0.35
- 0.80 1.10
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
200
400
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol
rr
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
Thermal Impedance
IGBT
Diode
Symbol
Rth(j-c)
Test Condition
= 200A,VGE= 0V
= 200A,VGE= -10V
di/dt= 400A/μs
Test Condition
Junction to Case
Min.
Typ.
1.9
Max. Unit
2.4
0.2 0.3
μs
Min.
Typ. Max. Unit
- 0.125 ℃/W
- 0.24
日本インター株式会社
Datasheet pdf - http://www.DataSheet4U.net/




Nihon Inter Electronics

PRHMB200B12 Datasheet Preview

PRHMB200B12 Datasheet

IGBT MODULE

No Preview Available !

www.DataSheet.co.kr
PRHMB200B12
Fig.1- Output Characteristics (Typical)
400
VGE=20V
12V
TC=25℃
10V
15V
300
9V
200
100
00
16
14
12
10
8
6
4
2
00
8V
7V
2468
Collector to Emitter Voltage VCE (V)
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
IC= 1 0 0 A
400A
200A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
VGE=0V
f= 1 MHZ
TC= 2 5 ℃
20000
Cies
10000
5000
2000 Coes
1000
500
Cres
200
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25℃
IC= 1 0 0 A
400A
14
200A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
RL=3Ω
TC=25℃
700
16
14
600 12
500 10
400 8
VCE=600V
300 6
400V
200 4
200V
100 2
00
0 300 600 900 1200 1500
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 tOFF
VCC=600V
RG= 2.0 Ω
VGE = ± 1 5 V
TC= 2 5 ℃
0.8
0.6 tf
0.4
0.2 tON
0 tr
0
50 100 150
Collector Current IC (A)
200
日本インター株式会社
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PRHMB200B12
Description IGBT MODULE
Maker Nihon Inter Electronics
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PRHMB200B12 Datasheet PDF






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