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Nihon Inter Electronics

PRHMB200A6A Datasheet Preview

PRHMB200A6A Datasheet

IGBT MODULE

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IGBT MODULE Chopper 200A 600V
CIRCUIT
PRHMB200A6A
OUTLINE DRAWING
2- fasten- tabNo110
Dimension(mm)
Approximate Weight : 320g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heat sink
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Symbol
VCES
VGES
IC
IC
PC
Tj
Tstg
VISO
FTOR
PRHMB200A6A
600
+/ - 20
200
400
780
-40 to +150
-40 to +125
2500
3.06
2.04
Unit
V
V
A
W
°C
°C
V
Nm
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current
ICES VCE=600V,VGE=0V
- - 2.0 mA
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
IGES
VCE(sat)
VGE=+/- 20V,VCE=0V
IC=200A,VGE=15V
- - 1.0 µA
- 2.1 2.6 V
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=200mA
4.0 - 8.0 V
Input Capacitance
C ies VCE=10V,VGE=0V,f=1MHz - 20000 -
pF
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
r VCC= 300V
on RL= 3 ohm
f RG= 3.6 ohm
off VGE= +/- 15V
0.15 0.3
0.25
0.2
0.4
0.35
µs
0.45 0.7
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Unit
Forward Current
DC
1 ms
IF
IFM
200
400
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=200A,VGE=0V
IF=200A,VGE=-10V,di/dt=200A/µs
Symbol
Test Condition
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
-
0.15 0.25
µs
Min. Typ. Max. Unit
-
-
-
-
0.16
0.38
°C/W
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Nihon Inter Electronics

PRHMB200A6A Datasheet Preview

PRHMB200A6A Datasheet

IGBT MODULE

No Preview Available !

www.DataSheet.co.kr
IGBT MODULE Chopper 200A 600V
Fig.1- Output Characteristics (Typical)
400 VGE=20V 12V
TC= 2 5
15V
300
10V
200
9V
100
0
0
16
14
12
10
8
6
4
2
00
2468
Collector to Emitter Voltage VCE (V)
8V
7V
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125
IC=80A
400A
200A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
20000
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25
10000
5000
2000
1000
500
200
100 0.2
0.5 1
2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
PRHMB200A6A
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25
IC=80A
400A
14
200A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=1.5Ω
TC=25
350
16
14
300 12
250 10
200 8
VCE= 3 0 0 V
150 6
200V
100
100V
4
50 2
00
0 150 300 450 600 750 900
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=3.6Ω
VGE=±15V
0.8 TC=25
0.7
0.6
0.5 toff
0.4
0.3 ton
0.2 tf
0.1
0
0
50 100 150
Collector Current IC (A)
tr
200
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Part Number PRHMB200A6A
Description IGBT MODULE
Maker Nihon Inter Electronics
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PRHMB200A6A Datasheet PDF






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