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Nihon Inter Electronics

PHT2508 Datasheet Preview

PHT2508 Datasheet

THYRISTOR MODULE

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THYRISTOR MODULE
250A / 800V
FEATURES
* Isolated Base
* Single Thyristor Module
* High Surge Capability
* UL Recognized, File No. E187184
www.DataShTeeYt4PUI.cComAL APPLICATIONS
* Rectified For General Use
PHT2508
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Approx Net Weight:250g
Grade
PHT2508
800
900
800
900
Unit
V
V
Parameter
Average Rectified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
IO(AV)
IT(RMS)
ITSM
I2t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
50Hz Half Sine Wave condition
Tc=65°C
250
390
50 Hz Half Sine Wave, 1Pulse
Non-Repetitive
4000
2msec to 10msec
80000
VD=2/3VDRM, ITM=2IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
100
5
1
2
10
5
-40 to +125
-40 to +125
Base Plate to Terminals, AC1min
2000
M5 Screw
2.4 to 2.8
M5 Screw
2.4 to 2.8
Unit
A
A
A
A2s
A/µs
W
W
A
V
V
°C
°C
V
Nm




Nihon Inter Electronics

PHT2508 Datasheet Preview

PHT2508 Datasheet

THYRISTOR MODULE

No Preview Available !

Electrical Thermal Characteristics
Characteristics
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
Gate Current to Trigger
Gate Voltage to Trigger
www.DataSheet4U.com
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
Symbol
Test Conditions
IDM VDM= VDRM, Tj= 125°C
IRM VRM= VRRM, Tj= 125°C
VTM ITM= 800A, Tj=25°C
Tj=-40°C
IGT VD=6V,IT=1A Tj=25°C
Tj=125°C
Tj=-40°C
VGT VD=6V,IT=1A Tj=25°C
Tj=125°C
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
tq dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
td
tr
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
IL Tj=25°C
IH Tj=25°C
Rth(j-c) Junction to Case
Rth(c-f)
Base Plate to
with Thermal
Heat Sink
Compound
Maximum Value.
Min. Typ. Max.
80
80
1.38
300
150
80
5
3
2
0.25
500
200
6
2
4
150
100
0.18
0.1
Unit
mA
mA
V
mA
V
V
V/µs
µs
µs
µs
µs
mA
°C/W


Part Number PHT2508
Description THYRISTOR MODULE
Maker Nihon Inter Electronics
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PHT2508 Datasheet PDF






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