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Nihon Inter Electronics

PCHMB300A6 Datasheet Preview

PCHMB300A6 Datasheet

IGBT MODULE

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IGBT MODULE Chopper 300A 600V
CIRCUIT
PCHMB300A6
OUTLINE DRAWING
2- fasten- tabNo110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heat sink
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Symbol
VCES
VGES
IC
IC
PC
Tj
Tstg
VISO
FTOR
PCHMB300A6
600
+/ - 20
300
600
1040
-40 to +150
-40 to +125
2500
3.06
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
ICES
IGES
VCE(sat)
VGE(th)
C ies
r
on
f
off
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=300A,VGE=15V
VCE=5V,IC=300mA
VCE=10V,VGE=0V,f=1MHz
VCC= 300V
RL= 1 ohm
RG= 2.0 ohm
VGE= +/- 15V
-
-
-
4.0
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Forward Current
DC
1 ms
IF
IFM
Rated Value
300
600
Approximate Weight : 430g
Unit
V
V
A
W
°C
°C
V
Nm
Typ.
-
-
2.1
-
30000
0.2
0.4
0.2
0.6
Max.
3.0
1.0
2.6
8.0
-
0.4
0.75
0.35
0.8
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=300A,VGE=0V
IF=300A,VGE=-10V,di/dt=300A/µs
Symbol
Test Condition
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
-
0.15 0.25
µs
Min. Typ. Max. Unit
-
-
-
-
0.12
0.24
°C/W




Nihon Inter Electronics

PCHMB300A6 Datasheet Preview

PCHMB300A6 Datasheet

IGBT MODULE

No Preview Available !

IGBT MODULE Chopper 300A 600V
PCHMB300A6
Fig.1- Output Characteristics (Typical)
600 VGE=20V 12V
TC= 2 5
500 15V
10V
400
300
9V
200
100
00
2468
Collector to Emitter Voltage VCE (V)
8V
7V
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=125
IC= 1 5 0 A
600A
14
300A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
200000
100000
50000
20000
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25
10000
5000
2000
1000
500
200
0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25
I C= 1 5 0 A
600A
14
300A
12
10
8
6
4
2
0 0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=1Ω
TC=25
350
16
14
300 12
250 10
200 8
VCE=300V
150 6
200V
100 4
100V
50 2
00
0 150 300 450 600 750 900 1050 1200 1350
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC=300V
0.9 RG=2.0Ω
VGE=±15V
0.8 TC=25
0.7
toff
0.6
0.5
ton
0.4
0.3
0.2 tf
0.1 tr
0
0 50 100 150 200
Collector Current IC (A)


Part Number PCHMB300A6
Description IGBT MODULE
Maker Nihon Inter Electronics
Total Page 3 Pages
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