FSQ10A04B
FSQ10A04B is Schottky Barrier Diode manufactured by Nihon Inter Electronics.
Features
- Similar to TO-220AB Case
- Fully Molded Isolation
- Low Forward Voltage Drop
- Low Power Loss,High Efficiency
- High Surge Capability
- Tj=150 °C operation
Maximum Ratings
Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
Average Rectified Output Current RMS Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque
Approx Net Weight: 1.75g
Symbol
VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 180 10
FSH10A04B 40 45 50 Hz half Sine Wave Tc=119°C Resistive Load 15.7 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 remended torque = 0.5
Unit V V A A A
°C °C N- m
Electrical
- Thermal Characteristics
Characteristics Peak Reverse Current .. Peak Forward Voltage Thermal Resistance Symbol IRM VFM Rth(j-c) Rth(c-f) Conditions Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 10 A Junction to Case Cace to Fin Min. Typ. Max. 10 0.59 3 1.5 Unit m A V °C /W °C /W
FSQ_A_B OUTLINE DRAWING (Dimensions in mm)
..
FORWARD CURRENT VS. VOLTAGE
FSQ10A04/FSQ10A04B
INSTANTANEOUS FORWARD CURRENT (A)
20 Tj=25°C Tj=150°C 10
1 0 0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE...