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FSQ10A04B - Schottky Barrier Diode

Datasheet Summary

Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 180 1.

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Datasheet Details

Part number FSQ10A04B
Manufacturer Nihon Inter Electronics
File Size 93.64 KB
Description Schottky Barrier Diode
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Full PDF Text Transcription

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SBD T y p e : FSQ10 FSQ10A0 Q10A04B A04B OULINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 180 10 FSH10A04B 40 45 50 Hz half Sine Wave Tc=119°C Resistive Load 15.7 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.
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