FSH10A09B
FSH10A09B is Schottky Barrier Diode manufactured by Nihon Inter Electronics.
FEATURES
- Similar to TO-220AB Case
- Fully Molded Isolation
- Low Forward Voltage Drop
- Low Power Loss,High Efficiency
- High Surge Capability
- Tj=150 °C operation
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Maximum Ratings
Rating Repetitive Peak Reverse Voltage
Average Rectified Output Current RMS Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque
Approx Net Weight: 1.75g
Symbol
VRRM IO IF(RMS) IFSM Tjw Tstg Ftor 180 10
FSH10A09B 90 50 Hz half Sine Wave Tc=121°C Resistive Load 15.7 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 remended torque = 0.5
Unit V A A A
°C °C N- m
Electrical
- Thermal Characteristics
Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Min. Typ. Max. 1 0.88 3 1.5 Unit m A V °C /W °C /W Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 10 A Rth(j-c) Junction to Case Rth(c-f) Cace to Fin
FSH_A_B OUTLINE DRAWING (Dimensions in mm)
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FORWARD CURRENT VS. VOLTAGE
FSH10A09/FSH10A09B
INSTANTANEOUS FORWARD CURRENT (A)
20 Tj=25°C Tj=150°C 10
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1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION
FSH10A09/FSH10A09B
D.C....