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30PDA10 - DIODE

Features

  • Low Forward Voltage drop.
  • Low Reverse Leakage Current.
  • High Surge Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIODE Type : 30PDA10 3A 100V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability OUTLINE DRAWING Maximum Ratings Approx Net Weight:1.24g Rating Symbol 30PDA10 Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM 100 50Hz Ta=31°C *1 IO Half Sine Wave Resistive Load Tl=124°C (Tl: Lead Temperature) IF(RMS) IFSM 50Hz Half Sine Wave,1cycle, Non-repetitive Tjw - 40 to + 150 Tstg - 40 to + 150 1.6 3.0 4.71 100 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Peak Reverse Current Peak Forward Voltage Thermal Resistance IRM Tj= 25°C, VRM= VRRM VFM Tj= 25°C, IFM= 3.
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