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11EQS10 - Low Forward Voltage drop Diode

Features

  • Miniature Size.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • 30volts trough 100volts Types Available.
  • 26mm and 52mm Inside Tape Spacing Package Available.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
11EQS03L Low Forward Voltage drop Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD Type :11EQS10 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS10 Unit Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM IO IF(RMS) IFSM Tjw Tstg 100 V 1.0 Ta=26°C Half Sine Wave Resistive Load 1.0 Ta=53°C A 1.
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