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TPC8026
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8026
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.
MM4005 Datasheet
