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2SB1502 - Silicon PNP Darlington Power Transistor

Download the 2SB1502 datasheet PDF. This datasheet also covers the 2SB1502_NewJerseySemi variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

High DC Current Gain: hFE= 5000(Min)@lc= -4A Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A

PIN 1.BASE 2.

3.

Designed for power amplifier applications O

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1502_NewJerseySemi-Conductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1502
Manufacturer New Jersey Semi-Conductor
File Size 96.73 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet 2SB1502 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
C/ J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 1 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PL package APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications. in .*T ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL PARAMETER VALUE UNIT D A VCBO Collector-Base Voltage -120 V uWf U iW !'-**M VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V mm Ic Collector Current-Continuous -5 A DIM A B C D E F G WIN 2S.50 1950 4.50 0.90 2.30 2.40 10.80 3.
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