Datasheet Summary
1. Features
GaNFast™ Power IC
- Large cooling pad
- Enhanced thermals when using CS resistor
- Monolithically-integrated gate drive
- Wide VCC range (10 to 30 V)
- Programmable turn-on dV/dt
- Source Kelvin ground
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 650 V Continuous Voltage Rating
- Low 70 mΩ resistance
- Zero reverse recovery charge
- ESD protection
- 2 kV (HBM), 1 kV (CDM)
- 2 MHz operation Small, low-profile SMT QFN
- 6 x 8 mm footprint, 0.85 mm profile
- Minimized package inductance Sustainability
- RoHS, Pb-free, REACH-pliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO2 Carbon Footprint reduction Product Reliability
- 20-year...