NPD8302 - N-Channel Monolithic Dual JFET

National Semiconductor (now Texas Instruments)

Download the NPD8302 datasheet PDF. This datasheet also covers the NPD8301 variant, as both devices belong to the same n-channel monolithic dual jfet family and are provided as variant models within a single manufacturer datasheet.

General Description

formance differential amplifiers requiring tightly matched gate-source voltage, low drift, high commonmode rejection, and low output conductance.

📥 Download Datasheet

NPD8302 n-channel monolithic dual jfet by National Semiconductor (now Texas Instruments) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NPD8301-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NPD8302
Manufacturer	National Semiconductor (now Texas Instruments)
File Size	32.27 KB
Description	N-Channel Monolithic Dual JFET
Datasheet	NPD8302 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NPD8302	dual n-channel JFET	Siliconix
NPD8301	dual n-channel JFET	Siliconix
NPD8303	dual n-channel JFET	Siliconix

Other Datasheets by National Semiconductor (now Texas Instruments)

Part Number	Description
NPD8301	N-Channel Monolithic Dual JFET
NPD8303	N-Channel Monolithic Dual JFET
NPD5564	N-Channel Monolithic Dual JFET
NPD5565	N-Channel Monolithic Dual JFET
NPD5566	N-Channel Monolithic Dual JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Process 83 NPD8301-03 N-Channel Monolithic Dual JFETs General Description The NPD8301 thru NPD8303 series of N-channel monolithic dual JFETs is designed for low cost, high per- formance differential amplifiers requiring tightly matched gate-source voltage, low drift, high commonmode rejection, and low output conductance. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage Gate Current Total Package Dissipation (25°C Free-Air) -40V 50 mA 350 mW Power Derating (to +125°C) 3.5 mW/°C Storage Temperature Range Operating Temperature Range -55°C to +125°C -55° C to +1 25° C Lead Temperature (1/16" from case for 10 seconds) 300°C Molded Dual-ln-Line Package (Nl Dos: (2.286) —— 110.160) ----w^l^lia 0.