NDS7000A datasheet, mosfet equivalent, National Semiconductor

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Features and benefits

Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378 <.

Application

requiring up to 400 mA DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage lo.

Description

These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance .

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