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LM6221 - High Speed Buffer

Download the LM6221 datasheet PDF. This datasheet also covers the LM6221H variant, as both devices belong to the same high speed buffer family and are provided as variant models within a single manufacturer datasheet.

Description

These high speed unity gain buffers slew at 800 V/µs and have a small signal bandwidth of 50 MHz while driving a 50Ω load.

They can drive ±300 mA peak and do not oscillate while driving large capacitive loads.

Features

  • of current limit and thermal shutdown. These buffers are built with National’s VIP™ (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation. Features n High slew rate: 800 V/µs n Wide bandwidth: 50 MHz n Slew rate and bandwidth 100% tested n Peak output current: ±300 mA n High input impe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LM6221H_NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by National Semiconductor (Texas Instruments)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LM6121/LM6221/LM6321 High Speed Buffer May 1998 LM6121/LM6221/LM6321 High Speed Buffer General Description These high speed unity gain buffers slew at 800 V/µs and have a small signal bandwidth of 50 MHz while driving a 50Ω load. They can drive ±300 mA peak and do not oscillate while driving large capacitive loads. The LM6121 family are monolithic ICs which offer performance similar to the LH0002 with the additional features of current limit and thermal shutdown. These buffers are built with National’s VIP™ (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation.
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