Datasheet Details
| Part number | NT5DS32M16AF |
|---|---|
| Manufacturer | Nanya Techology |
| File Size | 3.03 MB |
| Description | (NT5DSxxMxAF) 512Mb DDR SDRAM |
| Datasheet |
 NT5DS32M16AF Datasheet
|
|
|
Description
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.
It is internally configured as a quad-bank DRAM.
The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations.
Features
- CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR333 DDR266B 6K 75B 133 100 166 133.
- Double data rate architecture: two data transfers per clock cycle.
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
- DQS is edge-aligned with data.