NT5DS128M4CS Datasheet | Nanya Techology

Features - DDR 512M bit, Die C, based on 90nm design rules - Double data rate architecture: two data transfers per clock cycle - Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver - DQS is edge-aligned with data for reads and is centeraligned with data for writes - Differential clock inputs (CK and CK) - Four internal banks for concurrent operation - Data mask (DM) for write data - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Burst lengths: 2, 4, or 8 - CAS Latency: 2.5, 3 - Auto Precharge option for each burst access - Auto Refresh and Self Refresh Modes - 7.8µs Maximum Average Periodic Refresh Interval - 2.5V (SSTL_2 patible) I/O - VDD = VDDQ = 2.6V ± 0.1V (DDR400) - VDD = VDDQ = 2.5V ± 0.2V (DDR333) - Ro HS pliance Description Die C of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 90 nm design process. The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 512Mb DDR SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS is edgealigned with data for Reads and center-aligned with data for Writes. The 512Mb DDR SDRAM operates from a...