NT5TU64M8DE sdram equivalent, 512mb ddr2 sdram.
(1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment.
The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write lat.
The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank .
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