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NT5TU32M16CG - 512Mb DDR2 SDRAM C-Die

Download the NT5TU32M16CG datasheet PDF. This datasheet also covers the NT5TU128M4CE variant, as both devices belong to the same 512mb ddr2 sdram c-die family and are provided as variant models within a single manufacturer datasheet.

General Description

The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a highspeed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.

Key Features

  • 1.8V ± 0.1V Power Supply Voltage.
  • Programmable CAS Latency: 3, 4, 5, and 6.
  • Programmable Additive Latency: 0, 1, 2, 3, and 4.
  • Write Latency = Read Latency -1.
  • Programmable Burst Length: 4 and 8.
  • Programmable Sequential / Interleave Burst.
  • OCD (Off-Chip Driver Impedance Adjustment).
  • ODT (On-Die Termination).
  • 4 bit prefetch architecture.
  • 1k page size for x 4 & x 8, 2k page size for x16.
  • Data-Strobe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5TU128M4CE-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5TU32M16CG
Manufacturer Nanya
File Size 1.80 MB
Description 512Mb DDR2 SDRAM C-Die
Datasheet download datasheet NT5TU32M16CG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Programmable CAS Latency: 3, 4, 5, and 6 • Programmable Additive Latency: 0, 1, 2, 3, and 4 • Write Latency = Read Latency -1 • Programmable Burst Length: 4 and 8 • Programmable Sequential / Interleave Burst • OCD (Off-Chip Driver Impedance Adjustment) • ODT (On-Die Termination) • 4 bit prefetch architecture • 1k page size for x 4 & x 8, 2k page size for x16 • Data-Strobes: Bidirectional, Differential • 4 internal memory banks • Strong and Weak Strength Data-Output Driver • Auto-Refresh and Self-Refresh • Power Saving Power-Down modes • 7.8 µs max.