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NT5CB1024M4CN - 4Gb DDR3 SDRAM C-Die

General Description

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.0 04/ 2012 Free Datasheet http://www.0PDF. com 4Gb DDR.

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Datasheet Details

Part number NT5CB1024M4CN
Manufacturer Nanya
File Size 2.92 MB
Description 4Gb DDR3 SDRAM C-Die
Datasheet download datasheet NT5CB1024M4CN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.