Datasheet Details
| Part number | M2S4G64CB8HB5N |
|---|---|
| Manufacturer | Nanya |
| File Size | 613.51 KB |
| Description | Unbuffered DDR3 SO-DIMM |
| Datasheet |
 M2S4G64CB8HB5N Datasheet
|
|
|
General Description
M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N are un-buffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 128Mx64 (1GB) and one rank of 256Mx64 (2GB) / 512Mx64 (4GB) high-speed memory array.
Key Features
- Performance: Speed Sort DIMM CAS Latency fck.
- Clock Frequency tck.
- Clock Cycle fDQ.
- DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps.
- Programmable Operation: - DIMM Latency: 5, 6, 7, 8/PC3-8500; 5, 6, 7, 8, 9/PC3-10600; 5, 6, 7, 8, 9, 10, 11/PC3-12800 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write.
- Two different termi.