Si4606 mosfet equivalent, n+p complementary enhancement mosfet.
*Low On resistance.
*+4.5V drive.
*RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package Dimensions
Specifications
Absolute Maximum Rat.
1
Si4606
N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resist.
Image gallery
TAGS
+P
Download (Size : 465.83KB)