N08L1618C2A Datasheet | NanoAmp Solutions

Nano Amp Solutions, Inc. 670 North Mc Carthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. Advance Information .. 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using Nano Amp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard packages patible with other standard 512Kb x 16 SRAMs Features - Single Wide Power Supply Range 1.65 to 2.2 Volts - Very low standby current 0.5µA at 1.8V (Typical) - Very low operating current 1.0m A at 1.8V and 1µs (Typical) - Very low Page Mode operating current 0.5m A at 1.8V and 1µs (Typical) - Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion - Low voltage data retention Vcc = 1.2V - Very fast output enable access time 25ns OE access time - Very fast Page Mode access time t AAP = 25ns - Automatic power down to standby mode - TTL patible three-state output driver Product Family Part Number N08L1618C2AB N08L1618C2AB2 Package Type 48 - BGA 48 - BGA Green Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical 0.5 µA 1 m A @ 1MHz 70ns @ 1.8V -40o C to +85o C 1.65V - 2.2V 85ns @ 1.65V Pin Configuration 1 A B C D E F G H LB...