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N04L163WC1C Datasheet 4mb Ultra-low Power Asynchronous CMOS Sram

Manufacturer: NanoAmp Solutions

Overview: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L163WC1C Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N04L163WC1C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs.

Datasheet Details

Part number N04L163WC1C
Manufacturer NanoAmp Solutions
File Size 292.79 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N04L163WC1C_NanoAmpSolutions.pdf

Key Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 1.5mA at 3.0V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.5V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power down to standby mode.
  • TTL.

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