MBR600100CT Datasheet | Naina Semiconductor

Features - - - - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 o C TC = 25 o C tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A IFSM 4000 http://..net/ Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR60045CT (R) 0.75 1 20 MBR60060CT (R) 0.85 1 20 MBR60080CT (R) 0.88 1 20 MBR600100C T(R) 0.88 1 m A 20 Units V DC reverse current Thermal Characteristics (TJ = 25o C unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol Rth J-C TJ , Tstg MBR60045CT (R) 0.12 - 40 to +165 MBR60060CT (R) 0.12 - 40 to +165 MBR60080CT (R) 0.12 - 40 to +165 MBR600100C T(R) 0.12 - 40 to +165 Units o C/W o D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf - http://..net/ Naina Semiconductor Ltd. Package Outline MBR60045CT thru MBR600100CTR http://..net/ ALL DIMENSIONS IN MM Ordering Table MBR 1 600 2 45 3 CT 4 - Device Type > MBR = Schottky Barrier Diode Module 2 - Current Rating = IF(AV) 3 - Voltage = VRRM 4 - Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base) D-95, Sector 63, Noida - 201301,...