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Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A
IFSM
4000
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MBR600100CT Datasheet
