MBR50020CT
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR50020CT thru MBR50040CTR
Silicon Schottky Diode, 500A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 o C TC = 25 o C tp = 8.3 ms Conditions MBR50020CT (R) 20 14 20 500 MBR50030CT MBR50035CT (R) (R) 30 21 30 500 35 25 35 500 MBR50040CT (R) 40 28 40 500 Units V V V A
IFSM
3500 http://..net/
Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 250 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR50020CT (R) 0.75 1 20 MBR50030CT (R) 0.75 1 20 MBR50035CT (R) 0.75 1 20 MBR50040CT (R) 0.75 1 m A 20 Units V
DC reverse current
Thermal Characteristics (TJ =...
