MBR500100CT Datasheet | Naina Semiconductor

Naina Semiconductor Ltd. Features - - - - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 o C TC = 25 o C tp = 8.3 ms Conditions MBR50045CT (R) 45 32 45 500 MBR50060CT MBR50080CT (R) (R) 60 42 60 500 80 56 80 500 MBR500100C T(R) 100 70 100 500 Units V V V A IFSM 3500 http://..net/ Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 250 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR50045CT (R) 0.75 1 20 MBR50060CT (R) 0.85 1 20 MBR50080CT (R) 0.88 1 20 MBR500100C T(R) 0.88 1 m A 20 Units V DC reverse current Thermal Characteristics (TJ = 25o C unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol Rth J-C TJ , Tstg MBR50045CT (R) 0.12 - 40 to +165 MBR50060CT (R) 0.12 - 40 to +165 MBR50080CT (R) 0.12 - 40 to +165 MBR500100C T(R) 0.12 - 40 to +165 Units o C/W o D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf - http://..net/ Naina Semiconductor Ltd. Package Outline MBR50045CT thru MBR500100CTR http://..net/ ALL DIMENSIONS IN MM Ordering Table MBR 1 500 2 45 3 CT...