MBR40040CTR
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR40020CT thru MBR40040CTR
Silicon Schottky Diode, 400A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 o C TC = 25 o C tp = 8.3 ms Conditions MBR40020CT (R) 20 14 20 400 MBR40030CT MBR40035CT (R) (R) 30 21 30 400 35 25 35 400 MBR40040CT (R) 40 28 40 400 Units V V V A
IFSM
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Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 200 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR40020CT (R) 0.68 5 200 MBR40030CT (R) 0.68 5 200 MBR40035CT (R) 0.68 5 200 MBR40040CT (R) 0.68 5 m A 200 Units V
DC reverse current
Thermal Characteristics (TJ...
