The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR3545 thru MBR35100R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
45 32 45 35 600
http://www.DataSheet4U.net/
60 42 60 35 600 0.75 1.5 25
80 57 80 35 600 0.84 1.5 25
100 70 100 35 600 0.84 1.5
V V V A A V
0.68 1.