MBR20045CTR Features
* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rever
MBR20045CT_NainaSemiconductor.pdf
Datasheet Details
MBR20045CTR, MBR20045CT
Naina Semiconductor
184.85 KB
Schottky power diode.
This datasheet PDF includes multiple part numbers: MBR20045CTR, MBR20045CT.
Please refer to the document for exact specifications by model.
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