Download the 1N1188R datasheet PDF.
This datasheet also covers the 1N1187 variant, as both devices belong to the same standard recovery diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N1187(R)
Repetitive peak reverse voltage
VRRM
300
RMS reverse voltage
VRMS
210
DC blocking voltage
VDC 300
Continuous forward current
TC ≤ 140oC
IF(AV)
35
Surge non-repetitive forward current, hal.
Full PDF Text Transcription for 1N1188R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N1188R. For precise diagrams, and layout, please refer to the original PDF.
Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features Glass passivated die Low forward voltage drop High surge capability Low leakage...
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d die Low forward voltage drop High surge capability Low leakage current Normal and Reverse polarity Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1188(R) 400 280 400 35 595 1.2 10 10 1N1189(R) 500 3
1N1188R Datasheet
