Download the 1N1183R datasheet PDF.
This datasheet also covers the 1N1183 variant, as both devices belong to the same standard recovery diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N1183(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
VDC 50
Continuous forward current
TC ≤ 140oC
IF(AV)
35
Surge non-repetitive forward current, half-s.
Full PDF Text Transcription for 1N1183R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N1183R. For precise diagrams, and layout, please refer to the original PDF.
Naina Semiconductor Ltd. 1N1183 thru 1N1186R Standard Recovery Diode, 35A Features Glass passivated die Low forward voltage drop High surge capability Low leakage...
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d die Low forward voltage drop High surge capability Low leakage current Normal and Reverse polarity Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1184(R) 100 70 100 35 595 1.2 10 10 1N1185(R) 150 105 1
1N1183R Datasheet
